16 August 1988 Processing & Characterization Of Thin Films Of SiO2 On Si For Integrated Circuits
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947395
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO2 on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER SE spectra.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. M. Ravindra, N. M. Ravindra, W. N. Carr, W. N. Carr, O. L. Russo, O. L. Russo, D. Fathy, D. Fathy, A. R. Heyd, A. R. Heyd, K. Vedam, K. Vedam, J. Narayan, J. Narayan, } "Processing & Characterization Of Thin Films Of SiO2 On Si For Integrated Circuits", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947395; https://doi.org/10.1117/12.947395
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