16 August 1988 Studies Of Ion Beam Enhanced Mixing Of AlGaAs Superlattices
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947386
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The species dependence of ion induced superlattice mixing has been examined in AlAs-GaAs superlattice samples grown by molecular beam epitaxy. The interdiffusion of the superlattices induced by ion implantation with comparable ranges, doses and subsequent thermal anneals were measured with secondary ion mass spectrometry. The effects of elements of comparable mass (Ga, As, and Ge) and comparable valence (Si and Ge, Be and Zn) were compared. The experimental results show that Ga and As implantation cause only collision-induced mixing, while Ge implantation results in collision-induced mixing with additional impurity-induced mixing beyond the implant range. In comparison with Ge, Si induced mixing is similar in nature though there is a significant difference in the depth and extent of the mixing. The extent of the mixing is found to depend on the local Ge or Si concentration. The mixing effect of Be and Zn is predominately an impurity effect.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Mei, P. Mei, S. A. Schwarz, S. A. Schwarz, T. Venkatesan, T. Venkatesan, N. G. Stoffel, N. G. Stoffel, J. P. Harbison, J. P. Harbison, } "Studies Of Ion Beam Enhanced Mixing Of AlGaAs Superlattices", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947386; https://doi.org/10.1117/12.947386
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