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9 August 1988 Characterization of MeV iOn-Implanted GainAs/GaAs Using X-Ray And Raman Techniques
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947425
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Lattice relaxation, elastic strain, and phonon shifts are studied in as-grown, MeV ion-implanted, and thermally annealed strained GaInAs layers on GaAs(001) substrates. The degree of lattice relaxation for the as-grown samples is discussed in terms of the measured in-plane lattice constants and the calculated critical thickness. For the 15 MeV Cl or 9 MeV P ion bombarded GaInAs/GaAs, the beam-induced elastic strains and beam-induced phonon shifts are measured and discussed for samples with different degrees of initial relaxation. Thermal annealing on the as-grown and the ion-implanted GaInAs layers indicates a substantial thermal loss of indium in the thin surface layers and a full recovery of radiation damage in the GaInAs layers by 500°C.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chu R. Wie, K. Xie, H. M. Kim, J. F. Chen, G. Burns, F. H. Dacol, G. D. Pettit, and J. M. Woodall "Characterization of MeV iOn-Implanted GainAs/GaAs Using X-Ray And Raman Techniques", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947425
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