9 August 1988 Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988); doi: 10.1117/12.947434
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The In growth on cleaved GaAs(110) surfaces at room temperature (RT) and 80 K low temperature (LT) as well as the initial stage Schottky barrier formation at this interface has been studied using photoelectron spectroscopy. In grows as 3-D islands at RT, but in Stanski-Krastanov mode at LT. The size of the clusters has been estimated through an intensity study. The In core level spectra continuously shifts to high binding energy direction in the transformation from isolated atoms to bulk metal. The Fermi level pinning pattern shows a strong temperature dependence, which challenges current models of Schottky barrier formation at metal/semiconductor interfaces.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renyu Cao, Ken Miyano, K.Ken. Chin, Ingolf Lindau, William E. Spicer, "Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947434; https://doi.org/10.1117/12.947434
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KEYWORDS
Gallium arsenide

Interfaces

Metals

Chemical species

Gallium

Indium

Semiconductors

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