9 August 1988 Optical And Structural Characterization Of Boron Implanted GaAs
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947414
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The effects of boron ion implants on the properties of undoped semi-insulating (100) GaAs single crystals have been studied. Raman scattering, Rutherford backscattering spectrometry (RBS) with ion channeling, double-crystal x-ray diffraction (DCD), photoreflectance spectroscopy, and electron paramagnetic resonance measurements have been used to provide a more complete description of the implant damage. Multiple energy implants with total doses up to 1.5x1016 ions/cm 2 generated uniformly damaged regions from the surface to various depths that exceed a micron. The boron implants caused substantial changes in the intensities and linewidths of the Raman spectra which were correlated with the damage indicated by the channeling measurements. Partial removal of the implant damage was observed upon annealing. While both furnace anneals at 850°C and 925°C rapid thermal anneals via quartz lamps can remove much of the lattice strain as seen by changes in the Raman and DCD results, the RBS and photoreflectance measurements indicated that considerable disorder remained.
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R. C. Bowman, R. C. Bowman, D. N. Jamieson, D. N. Jamieson, P. M. Adams, P. M. Adams, R. L. Alt, R. L. Alt, } "Optical And Structural Characterization Of Boron Implanted GaAs", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947414; https://doi.org/10.1117/12.947414
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