9 August 1988 Optical Measurement Of Built-In And Applied Electric Fields In AlxGa1-xAs/GaAs Heterostructures
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947417
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Variable angle spectroscopic ellipsometry (VASE) is used to study the built-in electric fields in AlxGa1-xAs/GaAs heterostructures. VASE data, obtained with no electrical contacts on the sample, contain Franz-Keldysh (FK) lineshapes at the AlGaAs bandgap energy, which are due to the built-in field across the buried AlGaAs layer. Analysis of the lineshapes, using the FK theory together with a multilayer model, yields the approximate field profile in the layer. This, combined with a numerical solution of Poisson's equation, provides the approximate doping concentration. In addition, measurements made on samples with electrical contacts are described.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul G. Synder, Kenneth G. Merkel, John A. Woollam, "Optical Measurement Of Built-In And Applied Electric Fields In AlxGa1-xAs/GaAs Heterostructures", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947417; https://doi.org/10.1117/12.947417
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