9 August 1988 Photoluminescence Studies Of InGaAlAs Quaternary Alloys
Author Affiliations +
Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947428
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Photoluminescence data are used to obtain the concentration and temperature dependence of the bandgap energies of epitaxial layers of quaternary alloy In Ga Al As for Al concentrations less than 0.6. The samples were grown by MBE without an intervening buffer layer. For an In concentration of 0.1, the transition from a direct to an indirect bandgap material occurs at Al concentration of about 0.5. Coefficients of the temperature dependence of the bandgap energy are also presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric D. Jones, Eric D. Jones, L.Ralph Dawson, L.Ralph Dawson, } "Photoluminescence Studies Of InGaAlAs Quaternary Alloys", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947428; https://doi.org/10.1117/12.947428
PROCEEDINGS
5 PAGES


SHARE
Back to Top