9 August 1988 Photoreflectance And The Seraphin Coefficients In Quantum Well Structures
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947411
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The lineshape of photoreflectance spectra from quantum well structures remains an unsolved problem, despite previous attemps to develop an adequate model using Seraphin coefficients for a bulk semiconductor. We show that the Seraphin coefficients in quantum well structures are substantially different from those in the bulk. We obtain analytical forms of the coefficients for a single quantum well, which show that the interference phase depends on the geometrical structure of the quantum well. The predictions are confirmed by our experimental photoreflectance data from quantum well samples. Our study suggests a new approach to the study of the lineshape problem of modulation reflectance.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X. L. Zheng, D. Helman, B. Lax, F. A. Chambers, "Photoreflectance And The Seraphin Coefficients In Quantum Well Structures", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947411; https://doi.org/10.1117/12.947411
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