9 August 1988 Photoreflectance Study of Ion-implanted CdTe
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947413
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
We have used the contactless and nondestructive technique of photoreflectance (PR) to study boron-ion implanted {100} CdTe both before and after annealing. The samples studied were implanted using 100 to 400 keV boron ions to a dosage of 1x1016/cm2 and some were annealed in vacuum at 500C for 1 hour. The spectral measurements made at 77K in the vicinity of the direct gap, Eo, indicate three dominant phases with distinctly different line widths that may originate in a nearly crystalline, partially crystalline and heavily damaged regions in the sample. A study of the E1 spectra and the changes in the line shapes in the vicinity of Eo with varying the pump penetration depth from ~2500A using the 6328A He-Ne laser line to <400A using a near-ultra violet.beam yields some insight into the depth distribution and volume fraction of the three phases.
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P. M. Amirtharaj, R. C. Bowman, R. L. Alt, "Photoreflectance Study of Ion-implanted CdTe", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947413; https://doi.org/10.1117/12.947413

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