9 August 1988 Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947431
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Secondary Neutral Mass Spectrometry (SNMS) has been applied to the quantitative compositional analysis as a function of depth of AlxGa1-xAs material systems. The technique described utilizes Ar+ ions from a high frequency, low pressure plasma for sputtering the sample surface. Low primary ion energies (typically 200 eV), coupled with high sample current densities (1-2 mA/cm2) allow rapid, high resolution depth profiling since atomic mixing and "knock-on" effects are minimized. Sputtered neutrals are post-ionized in the plasma by electron bombardment. The well-known matrix effects which limit quantitation in Secondary Ion Mass Spectrometry (SIMS), are negligible in SNMS. The sensitivity factor for Al is found to be independent of sample composition, x.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicola Kelly, Ulrich Kaiser, "Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947431; https://doi.org/10.1117/12.947431
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