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9 August 1988 Reactive Ion Etching of MBE GaAs: A Raman Scattering Study
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947423
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The effect of reactive ion etching (RIE) on Si-doped molecular beam epitaxial (MBE) grown <100> GaAs has been studied by Raman scattering. The MBE samples were grown on doped substrates having a free carrier concentration of 1.5 x 1018 cm-3 . The ID phonon and coupled plasmon-ID phonon modes of reactive ion etched (RIE) GaAs were studied to determine both depletion widths and carrier concentrations. Measurable surface disorder, confined to within 10 nm of the surface, is observed for ion bombardment energies of > 300 eV. The Raman spectra of highly doped samples (N = 8 x 1018 cm-3 ), along with the I-V measurements of Schottky barriers made with RIE samples of lower free carrier concentration (N = 3 x 1017 cm-3 ), indicate that samples reactively ion etched with energies <200 eV provide a high quality GaAs surface.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bahram Roughani, Joubran J. Jbara, Joseph T. Boyd, Thomas D. Mantei, and Howard E. Jackson "Reactive Ion Etching of MBE GaAs: A Raman Scattering Study", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947423
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