Strain Distribution Of MBE Grown GexSi1_x/Si Layers by Raman Scattering

S. J. Chang; M. A. Kallel; K. L. Wang; R. C. Bowman Jr.; Peter Chow

doi:10.1117/12.947426

9 August 1988 Strain Distribution Of MBE Grown Ge_xSi_1-x/Si Layers by Raman Scattering

S. J. Chang, M. A. Kallel, K. L. Wang, R. C. Bowman Jr., Peter Chow

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947426
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The strain distribution of Ge_xSi_1-x/Si strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick Ge_xSi_1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.

Citation Download Citation

S. J. Chang, M. A. Kallel, K. L. Wang, R. C. Bowman Jr., and Peter Chow "Strain Distribution Of MBE Grown Ge_xSi_1-x/Si Layers by Raman Scattering", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947426

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