9 August 1988 Strain Distribution Of MBE Grown GexSi1-x/Si Layers by Raman Scattering
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947426
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The strain distribution of GexSi1-x/Si strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick GexSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.
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S. J. Chang, S. J. Chang, M. A. Kallel, M. A. Kallel, K. L. Wang, K. L. Wang, R. C. Bowman, R. C. Bowman, Peter Chow, Peter Chow, } "Strain Distribution Of MBE Grown GexSi1-x/Si Layers by Raman Scattering", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947426; https://doi.org/10.1117/12.947426
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