9 August 1988 Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation
Author Affiliations +
Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947432
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Thin germanium-rich layers have been formed by the implantation of Ge into Si substrates, followed by a wet oxidation process. We have measured the germanium concentration profile of layers formed by this method for samples initially implanted to a dose of 1 x 1017cm-2. Structural, optical, and electronic probes have been used, all of which yield similar results. The results from Ruth-erford backscattering (RBS), Auger spectroscopy (AES), Raman spectroscopy, and electroreflectance (ER) show that the germanium-rich layer is about 300A thick, and contains an average germanium concentration of 65%. The SiGe/Si interface is not sharp but diffuse, with a decreasing germanium concentration. In addition, the data suggest a thin layer of Si13Ge87 near the Si02/SiGe interface.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. M. Prokes, S. M. Prokes, O. J. Glembocki, O. J. Glembocki, E. P. Donovan, E. P. Donovan, R. Stahlbush, R. Stahlbush, W. E. Carlos, W. E. Carlos, H. Dietrich, H. Dietrich, A. Christou, A. Christou, } "Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947432; https://doi.org/10.1117/12.947432
PROCEEDINGS
7 PAGES


SHARE
Back to Top