Paper
8 September 1988 High Frequency Characterization Of Tape-Automated Bonding (TAB) Interconnects
S. M. Wentworth, D. P. Neikirk, C. R. Brahce
Author Affiliations +
Proceedings Volume 0947, Interconnection of High Speed and High Frequency Devices and Systems; (1988) https://doi.org/10.1117/12.947451
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The geometry of tape automated bonding (TAB) tape lends itself to microwave packaging applications where high density signal lines are required. in this paper we model the tape as a transmission line, since above 5 GHz the tape length is significant compared to the signal wavelength. A test chip has been fabricated to allow determination of the microwave characteristics of 3M's 120 lead, two-layer gold-plated ED copper tape, which has a polyimide support layer and an inner lead pitch of 8 mils. A characteristic impedance of 100 ± 10 Ω is found for the tape based upon measurements up to 18 GHz. This compares well with the theoretical model, which predicts an impedance between 98 and 118 . Theoretical models and practical considerations have been used to design a TAB tape which should be impedance matched to 50 Ω and exhibit good signal isolation. This design is presented, and the tape is currently being manufactured.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. M. Wentworth, D. P. Neikirk, and C. R. Brahce "High Frequency Characterization Of Tape-Automated Bonding (TAB) Interconnects", Proc. SPIE 0947, Interconnection of High Speed and High Frequency Devices and Systems, (8 September 1988); https://doi.org/10.1117/12.947451
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KEYWORDS
Lead

Microwave radiation

Gold

Copper

Systems modeling

Chemical mechanical planarization

Dielectrics

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