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21 September 1988 Fabrication Of InAsSbP PIN Detectors For 2.56µm Wavelength Operation
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Proceedings Volume 0949, Fibre Optics '88; (1988) https://doi.org/10.1117/12.947517
Event: Sira/Fibre Optics '88, 1988, London, United Kingdom
Abstract
Mesa PIN structures have been fabricated in the material system In(As,Sb,P) from layers grown by liquid-phase epitaxy lattice-matched to InAs substrates. The electrical performance of the structures shows their suitability as photodetectors at 2.56õm in optical communications.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. K. Sargood, J. Haigh, M. J. Robertson, and A. S. M. Ali "Fabrication Of InAsSbP PIN Detectors For 2.56µm Wavelength Operation", Proc. SPIE 0949, Fibre Optics '88, (21 September 1988); https://doi.org/10.1117/12.947517
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