Fabrication Of InAsSbP PIN Detectors For 2.56µm Wavelength Operation

S. K. Sargood; J. Haigh; M. J. Robertson; A. S. M. Ali

doi:10.1117/12.947517

21 September 1988 Fabrication Of InAsSbP PIN Detectors For 2.56µm Wavelength Operation

S. K. Sargood, J. Haigh, M. J. Robertson, A. S. M. Ali

Proceedings Volume 0949, Fibre Optics '88; (1988) https://doi.org/10.1117/12.947517
Event: Sira/Fibre Optics '88, 1988, London, United Kingdom

Abstract

Mesa PIN structures have been fabricated in the material system In(As,Sb,P) from layers grown by liquid-phase epitaxy lattice-matched to InAs substrates. The electrical performance of the structures shows their suitability as photodetectors at 2.56Ãµm in optical communications.

Citation Download Citation

S. K. Sargood, J. Haigh, M. J. Robertson, and A. S. M. Ali "Fabrication Of InAsSbP PIN Detectors For 2.56µm Wavelength Operation", Proc. SPIE 0949, Fibre Optics '88, (21 September 1988); https://doi.org/10.1117/12.947517

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