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17 January 1989 Crystallization Of Diamonds By Microwave Plasma Assisted Chemical Vapor Deposition
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Chemically vapor deposited diamond films have a potential for optical applications but so far only translucent films have been produced. The reason for the low transparency is considered to be related to the polycrystalline nature of the films and to defects. To elucidate the problem and indicate ways of improving film quality, the growth mechanism of CVD diamond must be understood. In microwave plasma assisted CVD the plasma is induced by microwaves in a mixture of hydrogen and methane. A high concentration of atomic hydrogen, much above the thermal equilibrium concentration, helps to prevent codeposition of graphite. The growth of diamond occurs in a narrow temperature range (900-1000°C) as a result of the interplay of several phenomena.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej R. Badzian, Teresa Badzian, and Dave Pickrell "Crystallization Of Diamonds By Microwave Plasma Assisted Chemical Vapor Deposition", Proc. SPIE 0969, Diamond Optics, (17 January 1989);


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