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16 January 1989 Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy
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Abstract
Gallium Arsenide thin films have been successfully grown onto (1102) sapphire substrates by Molecular Beam Epitaxy methods using a graded growth procedure. The initial layers of GaAs were grown at lower growth rates and at lower substrate temperatures, followed by a thicker GaAs layer grown at usual growth rate of 1 pm/h. The films grown at temperature of 585 °C show good surface morphology. Silicon doped GaAs films exhibit n type conductivity and show low temperature photoluminescence band with peak energy at 1.502 eV and line width of about 42 meV.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Biswas, J-I Chyi, H Morkoc, S. DiVita, and G. Kordas "Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy", Proc. SPIE 0970, Properties and Characteristics of Optical Glass, (16 January 1989); https://doi.org/10.1117/12.948181
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