16 January 1989 Infrared Reflectance Measurement Of Ion Implanted Silica
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Abstract
Infrared reflectance spectra of silica glass implanted with Ti, Cr, Mn, Fe, and Bi to doses between 0.5 - 6 x 1016 cm-2 have been measured from 5000 cm-1 to 400 cm-1 at room temperature. The ion energy of the implantation was 160 KeV and the current was 10μA. Alterations in reflectance of bands at 1125 and 481 cm-1 in the spectrum of an unimplanted sample of the order of 20% are observed. A band attributed to non-bridging oxygen ions at -1015 cm-1 is observed to increase in intensity with increasing dose for all species. The band at 1125 cm-1 is observed to shift to lower wavenumber with implantation. Bands due to implanted ion-oxygen vibrations were not detected. The magnitudes of the effects on the existing bands were ion specific. This ion specificity is attributed to the differing chemical states of the implanted ions after implantation.
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R H Magruder, R H Magruder, S. H. Morgan, S. H. Morgan, R A Weeks, R A Weeks, R. Zuhr, R. Zuhr, } "Infrared Reflectance Measurement Of Ion Implanted Silica", Proc. SPIE 0970, Properties and Characteristics of Optical Glass, (16 January 1989); doi: 10.1117/12.948172; https://doi.org/10.1117/12.948172
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