A 160 x 244 element PtSi IRCCD imaging array is characterized using a conventional approach com-monly reported for visible imagers, introducing as needed, issues specific to IR imagery. Mean-variance data is used to extract two CCD charge transfer efficiencies; one efficiency correspon6 to the charge lost in a transfer and the other efficiency corresponds to the charge partitioning in a transfer. The array is shown to be background limited for pixels close to the output node. A 2-point correction is shown to substantially reduce fixed pattern noise of linear PtSi photodetectors at backgrounds offset from the points of correction. The horizontal and vertical MRT of the array is measured to be 0.02°C at a spatial frequency of 1/6 cycle/mrad. 1/f noise was not observed in the array to 10-1 Hz.
J. E. Murguia,
J. M. Mooney,
W S. Ewing,
"Diagnostics On A PtSi Infrared Imaging Array", Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); doi: 10.1117/12.948284; https://doi.org/10.1117/12.948284