Indium doped silicon (Si:In) material has been used to fabricate the detector elements for an infrared (IR) radiometer array. The array will be employed in experiments on a spaceborne platform, where a low radiation background (fiDg < 109 cm-2sec-1) and a low operating temperature (T < 20 K) is provided. The performance of the Si:In detectors has been characterized prior to the assembly of the array. Test results will be presented for the spectral responsivity, the linearity, the frequency behaviour, the noise equivalent power values and the cross talk.
K. Ho fmann,
"Indium Doped Silicon Detector Arrays For Space Application", Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); doi: 10.1117/12.948312; https://doi.org/10.1117/12.948312