Reduction Of Surface Leakage Current In Cd0.2Hg0.8Te Photodiode

Y. Yoshida; Y. Hisa; T Takiguchi; Y Komine; K. Yasumura; K. Sato

doi:10.1117/12.948287

7 December 1988 Reduction Of Surface Leakage Current In Cd_0.2Hg_0.8Te Photodiode

Y. Yoshida, Y. Hisa, T Takiguchi, Y Komine, K. Yasumura, K. Sato

Proceedings Volume 0972, Infrared Technology XIV; (1988) https://doi.org/10.1117/12.948287
Event: 32nd Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1988, San Diego, CA, United States

Abstract

The surface leakage current of Cd0.2 Hg0.8Te photodiodes has been reduced by forming a wide gap epitaxial layer on the surface. CdHgTe double-layers consisting of p-CdxHgl_xTe (x>0.2)/p-Cd0.2Hg0,8Te were grown by liquid phase epitaxy on CdTe substrates. The hole carrier concen 3tration and m 1obility, obtained from van der Pauw Hall measurement at 77K, were 9x1015cm-3 and 6x102cm2V-15-, respectively. The p-n junctions were formed by removing the wide gap layer of 100/i m diameter to reach p-Cd0.2Hg0.8Te followed by the Indium diffusion in p-Cd0.2Hg0.8Te. The R0A products of the photodiode with and without the wide band gap layer were 9.1Q cm ² (λ c=11μ m) and 2.00 cm2 (λ c=10μ m) at 77K, respectively, which confirm the effect of the wide gap layer on the surface leakage current reduction.

Citation Download Citation

Y. Yoshida, Y. Hisa, T Takiguchi, Y Komine, K. Yasumura, and K. Sato "Reduction Of Surface Leakage Current In Cd_0.2Hg_0.8Te Photodiode", Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); https://doi.org/10.1117/12.948287

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