21 December 1988 Development And Test Of Fully Depleted Pn-CCD's For X-Ray Detection
Author Affiliations +
Fully depletable pn CCD's on high resistivity 280 pm thick silicon (e e:-, 2.5 kIlcm) have been fabricated. Their operation is based on the semiconductor drift chamber principle proposed by Gatti and Rehak. They are designed as energy and position sensitive radiation detectors for X-rays and (minimum-) ionizing particles. Two-dimensional semiconductor device modeling demonstrates the basic charge transfer mechanisms. Prototypes of the detectors have been tested in quasistatic and dynamic conditions. A preliminary charge transfer inefficiency e, has been determined to less than 10-3 at shift frequencies varying between 500 kHz and 6 MHz. The charge loss during the transfer is discussed. As a consequence, an improved design had been developed for a new fabrication iteration which is currently being tested.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Struder, L. Struder, H. Brauninger, H. Brauninger, G. Lutz, G. Lutz, M. Meier, M. Meier, P. Predehl, P. Predehl, M. Sterzik, M. Sterzik, J. Kemmer, J. Kemmer, P. Rehak, P. Rehak, } "Development And Test Of Fully Depleted Pn-CCD's For X-Ray Detection", Proc. SPIE 0982, X-Ray Instrumentation in Astronomy II, (21 December 1988); doi: 10.1117/12.948710; https://doi.org/10.1117/12.948710


CCDs for future x-ray astronomy missions
Proceedings of SPIE (October 14 1997)
6 x 6 cm fully depleted pn junction CCD for...
Proceedings of SPIE (March 31 1998)
Radiation damage test of the x ray CCDs with low...
Proceedings of SPIE (January 09 2003)
Performance Characteristics Of CCD's For The Acis Experiment
Proceedings of SPIE (December 20 1988)
Characterisation Of Fully Depleted Pn-CCD's For X-Ray Imaging
Proceedings of SPIE (November 26 1989)

Back to Top