7 February 1989 The Development And Characterization Of Neutron-Damaged GaAs X-Ray Detectors
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Abstract
Photoconductive x-ray detectors are becoming an important x-ray diagnostic as a result of their small size, fast response time, and high sensitivity. We are developing a discrete array of neutron-damaged GaAs detectors to be used in an imaging x-ray spectrometer, and we describe herein the techniques we use to fabricate and characterize them for an upcoming experiment. Using a 225-ps x-ray pulse from a laser-produced plasma, we measured the sensitivity and time response of the detectors to be 7.1 mA/W and on the order of 150 ps FWHM, respectively. The carrier mobility is 741 cm2/V.s at a bias of 2 x 104 V/cm.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. T. Springer, "The Development And Characterization Of Neutron-Damaged GaAs X-Ray Detectors", Proc. SPIE 0987, High Bandwidth Analog Applications of Photonics II, (7 February 1989); doi: 10.1117/12.959688; https://doi.org/10.1117/12.959688
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