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23 February 1989 Optimized Design Of Long-Wavelength Detectors For Integrated Photoreceivers
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Abstract
Metal-semiconductor-metal (MSM) and pin photodetectors have emerged over the past years as suitable options for large-bandwidth integrated receiver front-ends. In this paper we discuss the inherent bandwidth limitations set by practical constraints of size and quantum efficiency on InP/InGaAs based devices of both types under 1.3 and 1.55 pi m illumination. Large-bandwidth MSM detectors which use a strained GaAs layer between the InGaAs absorption layer and the Ti/Pt/Au contact fingers have been fabricated and tested. Their pulse response will be discussed in detail and compared with theoretical results.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Schumacher, J. Soole, G. Moehrke, and H. P. LeBlanc "Optimized Design Of Long-Wavelength Detectors For Integrated Photoreceivers", Proc. SPIE 0988, Components for Fiber Optic Applications III and Coherent Lightwave Communications, (23 February 1989); https://doi.org/10.1117/12.959744
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