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26 April 1989 A New Technique For Testing Surface Passivation Materials Of GaAs Photodiodes
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Surface recombination is very high for unpassivated GaAs photodiodes and hinders performance by lowering Jph while increasing Jo. Present passivation techniques use a GaA1As window layer to reduce recombination at the GaAs surface. However, problems of chemical instability and ohmic contact formation make GaAlAs less than the ideal material. Other potential window materials may better passivate the surface of GaAs while not incorporating the same problems as GaA1As. A new device design is presented which uses localized liquid phase epitaxy (L2PE) to obtain a multilevel structure. This device is useful in testing the performance of different passivating candidates for GaAs by allowing comparison of identical photodiodes with and without passivation. The structure avoids ohmic contact problems to the window layer and permits non-destructive testing of all semiconductor layers.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory C. DeSalvo and Allen M. Barnett "A New Technique For Testing Surface Passivation Materials Of GaAs Photodiodes", Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989);


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