26 April 1989 Heavy Doping Effect In P-N Junction Photodetector Cell
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ABSTRACT The effect of heavy doping (ND>1020cm-3) in n+p region of n+p junction devices were studied. The experimental investigation was done by fabricating different specially fabricated n+ junctions with different carrier concentrations ranging 1 x 1018 - 5 x 1020 cm-3 on a p-type boron doped silicon substrate. The heavy doping was found to have introduced a narrowing of bandgap energy. The contradictory behavior of bandgap shrinkage above 2 x 1020 cm-3 donor density was explained on the basis of FermiDirac Statistics. Lastly, the experimental data had been utilized to arrive at an empirical equation which through iteratively least squares reweighted techniques described the dependence of FDSE on doping concentration.
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Tapan Kumar Gupta, Tapan Kumar Gupta, "Heavy Doping Effect In P-N Junction Photodetector Cell", Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989); doi: 10.1117/12.960061; https://doi.org/10.1117/12.960061

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