6 December 1988 High Accuracy Determination Of Semiconductor Substrate And Waveguide Refractive Index By Prism Coupling
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Proceedings Volume 0993, Integrated Optical Circuit Engineering VI; (1988); doi: 10.1117/12.960084
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States
Abstract
Measurements of the refractive index of semiconductor materials, both in wafer and in waveguide form, are presented. The technique used to this purpose is based on radiation coupling into the material by a prism; this method is used for the first time on semiconductors, by means of a silicon prism. Accuracy to the fourth decimal place is demonstrated, in favorable comparison to the best available data.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Morasca, C. De Bernardi, "High Accuracy Determination Of Semiconductor Substrate And Waveguide Refractive Index By Prism Coupling", Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); doi: 10.1117/12.960084; https://doi.org/10.1117/12.960084
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KEYWORDS
Refractive index

Prisms

Semiconducting wafers

Semiconductors

Waveguides

Integrated optics

Doping

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