High-Sensitivity Bandpass RF Modulator In LiNbO3

G. E. Betts; L. M. Johnson; C. H. Cox

doi:10.1117/12.960078

6 December 1988 High-Sensitivity Bandpass RF Modulator In LiNbO₃

G. E. Betts, L. M. Johnson, C. H. Cox

Proceedings Volume 0993, Integrated Optical Circuit Engineering VI; (1988) https://doi.org/10.1117/12.960078
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

High-sensitivity lumped-element bandpass modulators in lithium niobate have been designed and evaluated. We discuss what ultimately limits the modulator response, then describe a passive resonant drive circuit, and give some experimental results from modulators using it. This circuit improves the response over that of a baseband device, but does so at the expense of reducing the bandwidth. Finally, we give experimental results from an optical link that uses this modulator. The high modulator response (equivalent to Vπ = 250 mV at 50 0) gives the link an input sensitivity only 16 dB above thermal noise while preserving a large dynamic range.

Citation Download Citation

G. E. Betts, L. M. Johnson, and C. H. Cox "High-Sensitivity Bandpass RF Modulator In LiNbO₃", Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); https://doi.org/10.1117/12.960078

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available