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9 February 1989 Optoelectronic Material Cd1-xZnxTe: Growth Characterization Applications
Sudhir B. Trivedi, Ronald G. Rosemeier
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Proceedings Volume 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II; (1989) https://doi.org/10.1117/12.960123
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States
Abstract
Initial interest in II-VI compound Cd1-xZnxTe has been due to its suitability as a good substrate material to grow Hg1-xCdxTe and Hg1-xZnxTe epilayers for building IR focal plane arrays. However, this material has potential applications as optical modulators, IR laser windows, and γ-ray detectors. For all the above-mentioned applications, compositionally and structurally homogeneous Cd1-xZnxTe crystals are needed. The present study focuses on the growth of Cd1-ZnxTe single crystals. Crystals were grown using a modified Bridgman technique in which both furnace and growth ampoule are kept stationary and the growth is accomplished by controlled cooling of the furnace. The resulting crystals are characterized with respect to their crystallographic perfection using chemical etching. The effect of annealing of the crystals is investigated; suitability of this material for various applications is discussed.
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Sudhir B. Trivedi and Ronald G. Rosemeier "Optoelectronic Material Cd1-xZnxTe: Growth Characterization Applications", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960123
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KEYWORDS
Crystals
Etching
Optoelectronics
Tellurium
Annealing
Optoelectronic devices
Optoelectronic packaging
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