17 January 1989 Design And Performance Of Very High Speed InGaAs And GaAs Photodiodes
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Proceedings Volume 0995, High Frequency Analog Communications; (1989) https://doi.org/10.1117/12.960147
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States
Abstract
High-speed In0.53Ga0.47As and GaAs photodiodes with varying absorption region thicknesses were grown by molecular beam epitaxy on semi-insulating InP and GaAs substrates, respectively. The fabricated devices exhibit measured impulse response characteristics which are close to the simulated ones. An Ino.53Gao.47As photodiode having 0.75 μm thick absorption region and 20 x 25 μm2 area is characterized by a leakage current 1 nA and responsivity of 0.35 A/W. The temporal response characteristics of this diode is characterized by a risetime of 21 ps and a FWHM of 27 psec. A GaAs photodiode which has a 1µm absorption region and 20 x 25 μm2 is characterized by a laser-limited rise time of 45 psec. and FWHM 55 psec. with a leakage current less than 1 nA and a responsivity of 0.65 A/W. A similar GaAs photodiode with a 0.5 μm absorption region and a 12 μm diameter active area is characterized by a risetime of 20 psec. and FWHM of 35 psec. with a leakage current much less than 1 nA and responsivity of 0.4 A/W. To our knowledge these performances are amongst the best reported for PIN photodiodes. Techniques for enhancing the device characteristics further will be described and discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Zebda, Y. Zebda, P. K. Bhattacharya, P. K. Bhattacharya, } "Design And Performance Of Very High Speed InGaAs And GaAs Photodiodes", Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); doi: 10.1117/12.960147; https://doi.org/10.1117/12.960147
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