High Power 1.3 µm Laser With Modulation Bandwidth To X-Band

W. Ng

doi:10.1117/12.960138

17 January 1989 High Power 1.3 µm Laser With Modulation Bandwidth To X-Band

W. Ng

Proceedings Volume 0995, High Frequency Analog Communications; (1989) https://doi.org/10.1117/12.960138
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

Recent progress in the development of high power("37 mW) and high speed ("11.5 GHz) p-substrate GaInAsP buried crescent lasers is summarized. Their modulation characteristics, such as signal to noise ratio and two-tone intermodulation distortion, are described. In addition, preliminary results for buried crescent lasers fabricated on semi-insulating InP substrates are presented.

Citation Download Citation

W. Ng "High Power 1.3 µm Laser With Modulation Bandwidth To X-Band", Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); https://doi.org/10.1117/12.960138

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