High Speed InGaAs/InP Photodiodes For Applications To 40 Ghz

A J Moseley; A C Carter; M Q Kearley; C A Park; D A Humphreys

doi:10.1117/12.960145

17 January 1989 High Speed InGaAs/InP Photodiodes For Applications To 40 Ghz

A J Moseley, A C Carter, M Q Kearley, C A Park, D A Humphreys

Proceedings Volume 0995, High Frequency Analog Communications; (1989) https://doi.org/10.1117/12.960145
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

High speed GaInAs/InP photodiodes have been developed for applications to 40 GHz with monomode fibre pigtail or window optical access. The design is based on a substrate illuminated photodiode chip which is flip-chip bonded onto a coplanar microwave transmission line which contains the necessary bias decoupling. This approach offers the optimum design for minimising the parasitic impedances and maintaining the line impedance up to the active component. Results of modelling the transient performance of the photodiode chip as a function of the device diameter and epi-layer thickness will be presented for frequencies up to 40 GHz. This shows an optimum thickness for any given diameter to maintain maximum device area for efficient coupling. Using this approach a device of 30 ern diameter will have a predicted -3dB frequency response of 38 GHz. Fully packaged devices have been characterised by a laser heterodyning technique using two DFB lasers to generate microwave optical frequencies up to 16 GHz. 30 µm and 40μm diameter devices have been measured to have an essentially flat response up to 16 GHz.

Citation Download Citation

A J Moseley, A C Carter, M Q Kearley, C A Park, and D A Humphreys "High Speed InGaAs/InP Photodiodes For Applications To 40 Ghz", Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); https://doi.org/10.1117/12.960145

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