16 December 1988 Assisted Arf Excimer Photo-Etching Of Mercury Cadmium Telluride (MGT) Semiconductor
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Proceedings Volume 0998, Excimer Beam Applications; (1988) https://doi.org/10.1117/12.960212
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States
Abstract
UV excimer etching could be an alternative method to classical lithography for the conversion of MOT planar waveguides into strip waveguides. Some preliminary results are given, which concern HgCdTe photoablation by ArF excimer laser emitting at 193 nm, under inert or chemically active surrounding gas conditions.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alain Azema, Jean Botineau, Philippe Gaucherel, Jean-Claude Roustan, "Assisted Arf Excimer Photo-Etching Of Mercury Cadmium Telluride (MGT) Semiconductor", Proc. SPIE 0998, Excimer Beam Applications, (16 December 1988); doi: 10.1117/12.960212; https://doi.org/10.1117/12.960212
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