Assisted Arf Excimer Photo-Etching Of Mercury Cadmium Telluride (MGT) Semiconductor

Alain Azema; Jean Botineau; Philippe Gaucherel; Jean-Claude Roustan

doi:10.1117/12.960212

16 December 1988 Assisted Arf Excimer Photo-Etching Of Mercury Cadmium Telluride (MGT) Semiconductor

Alain Azema, Jean Botineau, Philippe Gaucherel, Jean-Claude Roustan

Proceedings Volume 0998, Excimer Beam Applications; (1988) https://doi.org/10.1117/12.960212
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

UV excimer etching could be an alternative method to classical lithography for the conversion of MOT planar waveguides into strip waveguides. Some preliminary results are given, which concern HgCdTe photoablation by ArF excimer laser emitting at 193 nm, under inert or chemically active surrounding gas conditions.

Citation Download Citation

Alain Azema, Jean Botineau, Philippe Gaucherel, and Jean-Claude Roustan "Assisted Arf Excimer Photo-Etching Of Mercury Cadmium Telluride (MGT) Semiconductor", Proc. SPIE 0998, Excimer Beam Applications, (16 December 1988); https://doi.org/10.1117/12.960212

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available