Some Remarks About Linewidth Variations

Hans R. Rottmann

doi:10.1117/12.955348

8 August 1977 Some Remarks About Linewidth Variations

Hans R. Rottmann

Proceedings Volume 0100, Developments in Semiconductor Microlithography II; (1977) https://doi.org/10.1117/12.955348
Event: Developments in Semiconductor Microlithography II, 1977, San Jose, United States

Abstract

The aim of this work is to determine different types of contributions to dimensional errors so that appropriate and selective improvements can be undertaken toward optimization of the photolithographic process. Preliminary results are given on contributions by the resist, lens, and errors due to focus and exposure. Systematic variations below O.lμm were found in many instances.

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Hans R. Rottmann "Some Remarks About Linewidth Variations", Proc. SPIE 0100, Developments in Semiconductor Microlithography II, (8 August 1977); https://doi.org/10.1117/12.955348

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