14 December 2016 On-wafer high temperature characterization system
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Proceedings Volume 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII; 1001006 (2016) https://doi.org/10.1117/12.2247062
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2016, 2016, Constanta, Romania
Abstract
In this work a on-wafer high temperature characterization system for wide bandgap semiconductor devices and circuits has been designed, implemented and tested. The proposed system can perform the wafer temperature adjustment in a large domain, from the room temperature up to 3000C with a resolution better than ±0.50C. In order to obtain both low-noise measurements and low EMI, the heating element of the wafer chuck is supplied in two ways: one is from a DC linear power supply connected to the mains electricity, another one is from a second DC unit powered by batteries. An original temperature control algorithm, different from classical PID, is used to modify the power applied to the chuck.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Teodorescu, F. Drăghici, I. Rusu, G. Brezeanu, "On-wafer high temperature characterization system", Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 1001006 (14 December 2016); doi: 10.1117/12.2247062; https://doi.org/10.1117/12.2247062
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