14 December 2016 Structural analysis of multilayer metal nitride films CrN/MoN using electron backscatter diffraction (EBSD)
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Proceedings Volume 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII; 100100E (2016) https://doi.org/10.1117/12.2243279
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2016, 2016, Constanta, Romania
Abstract
The electron backscatter diffraction (EBSD) analysis method was used for studying structure and properties of multilayer nitride CrN/MoN coatings fabricated by cathode arc physical vapour deposition (Arc-PVD). Samples were deposited on steel substrate with different single layer thickness from tens nanometers to 1 micron and with total thickness of coatings up to 8-13 μm. Colour grains mapping, grain size distribution profiles, pole figures and texture analyses were the main research instruments. Studying of obtained coatings was performed on specially prepared polished cross-section samples. The dependence between single layer thickness and grain size of materials, which is also changing through depth profile of the coating, was observed. In addition, it was possible to study phase composition, prevailing crystals orientation, dominant texture and grains growth. Studying of grains size, as well as other indicated parameters, is a very important task because it gives an information about grains interfaces volume, which causes changes in mechanical properties of material. Obtained results were cross-checked by X-ray diffraction analysis (XRD) where it was possible.
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Bogdan Postolnyi, Bogdan Postolnyi, Oleksandr Bondar, Oleksandr Bondar, Marek Opielak, Marek Opielak, Przemysław Rogalski, Przemysław Rogalski, João Pedro Araújo, João Pedro Araújo, } "Structural analysis of multilayer metal nitride films CrN/MoN using electron backscatter diffraction (EBSD)", Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 100100E (14 December 2016); doi: 10.1117/12.2243279; https://doi.org/10.1117/12.2243279
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