14 December 2016 Comparative shear tests of some low temperature lead-free solder pastes
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Proceedings Volume 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII; 100100J (2016) https://doi.org/10.1117/12.2246106
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2016, 2016, Constanta, Romania
Abstract
The range of electronic components and as a consequence, all parts of automotive electronic equipment operating temperatures in a vehicle is given by the location of that equipment, so the maximum temperature can vary between 358K and 478K1. The solder joints could be defined as passive parts of the interconnection structure of automotive electronic equipment, at a different level, from boards of electronic modules to systems. The manufacturing costs reduction necessity and the RoHS EU Directive3, 7 consequences generate the trend to create new Low-Temperature Lead-Free (LTLF) solder pastes family9. In the paper, the mechanical strength of solder joints and samples having the same transversal section as resistor 1206 case type made using the same LTLF alloys into Vapour Phase Soldering (VPS) process characterized by different cooling rates (slow and rapid) and two types of test PCBs pads finish, were benchmarked at room temperature. The presented work extends the theoretical studies and experiments upon heat transfer in VPSP in order to optimize the technology for soldering process (SP) of automotive electronic modules and could be extended for home and modern agriculture appliances industry. The shear forces (SF) values of the LTLF alloy samples having the same transversal section as resistor 1206 case type will be considered as references values of a database useful in the new solder alloy creation processes and their qualification for automotive electronics domain.
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Mihai Branzei, Ioan Plotog, Gaudentiu Varzaru, Traian C. Cucu, "Comparative shear tests of some low temperature lead-free solder pastes", Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 100100J (14 December 2016); doi: 10.1117/12.2246106; https://doi.org/10.1117/12.2246106
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