14 December 2016 Absorption and emission spectra of Ga1.7Ge25As8.3S65 glasses doped with rare-earth ions
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Proceedings Volume 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII; 100100P (2016) https://doi.org/10.1117/12.2243163
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2016, 2016, Constanta, Romania
Abstract
Excellent optical properties of chalcogenide glasses make them interesting for optoelectronic devices in the visible (VIS) and, especially, in the near- and mid-infrared (NIR and MIR) spectral regions. The rare-earth (RE3+) doped Ga17Ge25As8.3S65 glasses were prepared in evacuated (~10−5 Pa) silica-glass ampoules which were heated up to 1000 °C at 2–4°C min-1, and then the melt was quenched. The absorption and photoluminescence spectra in the visible and near IR regions for GA1.7Ge25As8.3S65 doped with rare-earth RE+) ions (Sm3+, Nd3+, Pr3+, Dy3+ and co-doped with Ho3++Dy3+) are investigated. The energy transfer of the absorbed light in the broad band Urbach region of the host glass to the RE3+ ions is suggested for increasing the emission efficiency. The investigated Ga17Ge25As8.3S65 glasses doped with RE3+ ions are promising materials for optical amplifiers operating at 1300 and 1500 nm telecommunication windows.
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E. V. Lupan, E. V. Lupan, O. V. Iaseniuc, O. V. Iaseniuc, V. I. Ciornea, V. I. Ciornea, M. S. Iovu, M. S. Iovu, } "Absorption and emission spectra of Ga1.7Ge25As8.3S65 glasses doped with rare-earth ions", Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 100100P (14 December 2016); doi: 10.1117/12.2243163; https://doi.org/10.1117/12.2243163
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