14 December 2016 Destructive effects induced by the electron beam in scanning electron microscopy
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Proceedings Volume 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII; 100102N (2016) https://doi.org/10.1117/12.2243207
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2016, 2016, Constanta, Romania
Abstract
The Scanning Electron Microscopy has been validated by its impressive imaging and reliable measuring as an essential characterization tool for a variety of applications and research fields. This paper is a comprehensive study dedicated to the undesirable influence of the accelerated electron beam associated with the dielectric materials, sensitive structures or inappropriate sample manipulation. Depending on the scanning conditions, the electron beam may deteriorate the investigated sample due to the extended focusing or excessive high voltage and probe current applied on vulnerable configurations. Our aim is to elaborate an instructive material for improved SEM visualization capabilities by overcoming the specific limitations of the technique. Particular examination and measuring methods are depicted along with essential preparation and manipulation procedures in order to protect the integrity of the sample. Various examples are mentioned and practical solutions are described in respect to the general use of the electron microscope.
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M. C. Popescu, M. C. Popescu, B. I. Bita, B. I. Bita, M. A. Banu, M. A. Banu, R. M. Tomescu, R. M. Tomescu, } "Destructive effects induced by the electron beam in scanning electron microscopy", Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 100102N (14 December 2016); doi: 10.1117/12.2243207; https://doi.org/10.1117/12.2243207
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