6 December 2016 Impacts of SiO2 planarization on optical thin film properties and laser damage resistance
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Lawrence Livermore National Laboratory (LLNL) and Colorado State University (CSU) have co-developed a planarization process to smooth nodular defects. This process consists of individually depositing then etching tens of nanometers of SiO2 with a ratio of 2:1, respectively. Previous work shows incorporating the angular dependent ion surface etching and unidirectional deposition reduces substrate defect cross-sectional area by 90%. This work investigates the micro-structural and optical modifications of planarized SiO2 films deposited by ion beam sputtering (IBS). It is shown the planarized SiO2 thin films have ~3x increase in absorption and ~18% reduction in thin film stress as compared to control (as deposited) SiO2. Planarized SiO2 films exhibit ~13% increase in RMS surface roughness with respect to the control and super polished fused silica substrates. Laser-induced damage threshold (LIDT) results indicate the planarization process has no effect on the onset fluence but alters the shape of the probability vs fluence trace.
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T. Day, T. Day, H. Wang, H. Wang, E. Jankowska, E. Jankowska, B. A. Reagan, B. A. Reagan, J. J. Rocca, J. J. Rocca, C. J. Stolz, C. J. Stolz, P. Mirkarimi, P. Mirkarimi, J. Folta, J. Folta, J. Roehling, J. Roehling, A. Markosyan, A. Markosyan, R. R. Route, R. R. Route, M. M. Fejer, M. M. Fejer, C. S. Menoni, C. S. Menoni, } "Impacts of SiO2 planarization on optical thin film properties and laser damage resistance", Proc. SPIE 10014, Laser-Induced Damage in Optical Materials 2016, 1001422 (6 December 2016); doi: 10.1117/12.2245058; https://doi.org/10.1117/12.2245058

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