6 December 2016 Impacts of SiO2 planarization on optical thin film properties and laser damage resistance
Author Affiliations +
Abstract
Lawrence Livermore National Laboratory (LLNL) and Colorado State University (CSU) have co-developed a planarization process to smooth nodular defects. This process consists of individually depositing then etching tens of nanometers of SiO2 with a ratio of 2:1, respectively. Previous work shows incorporating the angular dependent ion surface etching and unidirectional deposition reduces substrate defect cross-sectional area by 90%. This work investigates the micro-structural and optical modifications of planarized SiO2 films deposited by ion beam sputtering (IBS). It is shown the planarized SiO2 thin films have ~3x increase in absorption and ~18% reduction in thin film stress as compared to control (as deposited) SiO2. Planarized SiO2 films exhibit ~13% increase in RMS surface roughness with respect to the control and super polished fused silica substrates. Laser-induced damage threshold (LIDT) results indicate the planarization process has no effect on the onset fluence but alters the shape of the probability vs fluence trace.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Day, H. Wang, E. Jankowska, B. A. Reagan, J. J. Rocca, C. J. Stolz, P. Mirkarimi, J. Folta, J. Roehling, A. Markosyan, R. R. Route, M. M. Fejer, C. S. Menoni, "Impacts of SiO2 planarization on optical thin film properties and laser damage resistance", Proc. SPIE 10014, Laser-Induced Damage in Optical Materials 2016, 1001422 (6 December 2016); doi: 10.1117/12.2245058; https://doi.org/10.1117/12.2245058
PROCEEDINGS
8 PAGES


SHARE
Back to Top