Compared with traditional methods of energy supply, there is a great possibility to get a more remarkable enhancement of conversion efficiency for laser power (of proper wavelength and intensity) beaming to silicon solar cells. However, it should be noticed that cells may be damaged by high power laser. Based on the background, this essay explores high-power-laser's possible damage to silicon solar cells by analyzing IV curves (obtained by IV tester) and minority-carrier lifetime (measured by open-circuit-voltage-decay method). Research shows that, for 30s irradiation, minority-carrier lifetime decreases to some extent when irradiated by laser of over 5.5W/cm2 and the higher laser power density, the more degradation. Similarly, IV curves see a downward trend under laser of over 5.5W/cm2. In addition, there is a roughly linear relationship between lifetime and the decrease amount of short circuit current. Moreover, the degradation degree has a close relation with the maximum temperature. The prolonged illumination would not bring about more serious damage if one cell had already reached an equilibrium temperature.