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9 November 2016 Recent progress in 1.3- and 1.5-μm waveband wafer-fused VCSELs
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The progress of 1.3- and 1.5-μm waveband wafer-fused VCSELs is reported. The emission of single mode power of 6 - 8 mW at room temperature and up to 3 mW at 80°C were demonstrated. 10-Gb/s full wavelength-set VCSEL devices for CWDM systems with high yield and Telcordia-reliability were industrially manufactured. By increasing the compressive strain in the QWs and reducing the cavity photon life time the modulation bandwidth was increased to 11.5 GHz, and large-signal data transmission experiments show error-free operation and open eye diagrams from 25 to 35 Gb/s in both B2B and after 10-km, respectively.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Mereuta, A. Caliman, A. Sirbu, V. Iakovlev, D. Ellafi, A. Rudra, P. Wolf, D. Bimberg, and E. Kapon "Recent progress in 1.3- and 1.5-μm waveband wafer-fused VCSELs", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 1001702 (9 November 2016);

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