9 November 2016 TO packaged 650nm red semiconductor laser with transparent window
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Abstract
Highly uniform solid-phase Zn-diffusion technique was developed to fabricate transparent windows for 650 nm red laser diodes (LDs). The maximum output power was up to 120 mW, which is three times higher than that for LDs without window structure. The LDs showed excellent thermal characteristics and aging reliability with TO-can package. The characteristic temperature was estimated to be 85 K in the temperature range of 25~65 °C. The LDs showed stable operation of 10 mW at a high temperature of 75 °C. After aging test of 2000 h, the elevated operation current was less than 3%, compared to the initial value. The predicted life time was over 10000 h for 10 mW operation at 75 °C.
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Wei Xia, Wei Xia, Zhen Zhu, Zhen Zhu, Peixu Li, Peixu Li, Jian Su, Jian Su, Xin Zhang, Xin Zhang, Xiangang Xu, Xiangang Xu, } "TO packaged 650nm red semiconductor laser with transparent window", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170A (9 November 2016); doi: 10.1117/12.2247830; https://doi.org/10.1117/12.2247830
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