9 November 2016 830 nm InGaAs quantum well lasers with very low beam divergence
Author Affiliations +
We report on our design and fabrication of 830 nm high power semiconductor lasers with extremely low beam divergence. Here we propose a novel approach in which by combining asymmetric waveguide and a feature called “pins” together, we were able to design an optimized epi structure which not only produces a beam divergence of less than 16°, but also has very good growth tolerance as well. Tested devices show the beam divergence is as small as 13°, yet they still retain very high slope efficiency of around 1.15 W/A and low threshold current of 400 mA for the devices with cavity length being 2 mm long, and ridge width being 40 μm wide.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bocang Qiu, Bocang Qiu, H. Martin Hu, H. Martin Hu, Weimin Wang, Weimin Wang, James Ho, James Ho, Wenbin Liu, Wenbin Liu, Langxing Kuang, Langxing Kuang, Taishan Wang, Taishan Wang, Shujuan Wu, Shujuan Wu, } "830 nm InGaAs quantum well lasers with very low beam divergence", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170B (9 November 2016); doi: 10.1117/12.2247924; https://doi.org/10.1117/12.2247924


Nonlinear optical gain in InGaAs/InGaAsP quantum-wells
Proceedings of SPIE (February 01 1991)
AlGaInAs/InP ridge-guide lasers operating at 1.55 um
Proceedings of SPIE (April 07 1998)
Strained quaternary InAlGaAs 810-nm lasers
Proceedings of SPIE (June 16 1993)
Simulation of GaInP laser diode structure
Proceedings of SPIE (June 06 1997)

Back to Top