9 November 2016 Fabrication and performance of In0.66Ga0.34As0.73P0.27/In0.89Ga0.11As0.23P0.77 mulltiple-quantum-well lasers
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Abstract
An In0.66Ga0.34As0.73P0.27/In0.89Ga0.11As0.23P0.77 quantum-well laser structure was grown on an InP substrate. The whole structure was grown by metalorganic chemical vapor deposition. The material quality was characterized by double crystal X-ray diffraction and room-temperature photoluminescence spectra. It shows that the active region’s optical properties are comparable to that InGaAs/InGaAsP quantum-well lasers. Meanwhile, we fabricated an InP-based InGaAsP/InGaAsP multiple quantum wells (MQWs) laser at 1.3 μm wavelength. Under quasi-continuous wave condition, a threshold current of 400 mA and the single side slope efficiency of 0.18 mW/mA are achieved for a broad area device with 100 μm-wide strip and 500 μm-long cavity at room-temperature. The wavelength of emission spectrum is 1305 nm. When the injection current is 700 mA, FWHM of the envelope is 3.6 nm.
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Jia Chen, Qi Wang, Hao Liu, Zhiming Li, Xiaomin Ren, "Fabrication and performance of In0.66Ga0.34As0.73P0.27/In0.89Ga0.11As0.23P0.77 mulltiple-quantum-well lasers", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170L (9 November 2016); doi: 10.1117/12.2245987; https://doi.org/10.1117/12.2245987
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