9 November 2016 High performance 808 nm GaAsP/InGaP quantum well lasers
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We report on our design and fabrication of very high power semiconductor lasers based on a core-aluminum-free (CAF) active structure. The optical power of as high as 45 W, limited by the thermal roll-over, has been obtained when the single emitter devices are tested under quasi-continuous wave (QCW) conditions, and more than 10 W has been acquired at the operation current of 10 A under continuous wave (CW) conditions. For 10 mm long bar chips, emitting power of up to 200 W is attainable for the operation current of 200 A. The lasers also exhibit excellent slope efficiency of about 1.3 W/A and beam divergence of only 25 °.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Martin Hu, H. Martin Hu, Bocang Qiu, Bocang Qiu, Weimin Wang, Weimin Wang, Chunyu Miao, Chunyu Miao, James Ho, James Ho, Wenbin Liu, Wenbin Liu, Chengpeng Li, Chengpeng Li, } "High performance 808 nm GaAsP/InGaP quantum well lasers", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170M (9 November 2016); doi: 10.1117/12.2247781; https://doi.org/10.1117/12.2247781

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