9 November 2016 High performance 808 nm GaAsP/InGaP quantum well lasers
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Abstract
We report on our design and fabrication of very high power semiconductor lasers based on a core-aluminum-free (CAF) active structure. The optical power of as high as 45 W, limited by the thermal roll-over, has been obtained when the single emitter devices are tested under quasi-continuous wave (QCW) conditions, and more than 10 W has been acquired at the operation current of 10 A under continuous wave (CW) conditions. For 10 mm long bar chips, emitting power of up to 200 W is attainable for the operation current of 200 A. The lasers also exhibit excellent slope efficiency of about 1.3 W/A and beam divergence of only 25 °.
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H. Martin Hu, Bocang Qiu, Weimin Wang, Chunyu Miao, James Ho, Wenbin Liu, Chengpeng Li, "High performance 808 nm GaAsP/InGaP quantum well lasers", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170M (9 November 2016); doi: 10.1117/12.2247781; https://doi.org/10.1117/12.2247781
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