9 November 2016 4W high performance 1470 nm InGaAsAs lasers
Author Affiliations +
Abstract
We report on our design and fabrication of 1470 nm high power InGaAlAs quantum well lasers. It is found that the 2-mm-long-cavity devices with aperture size of 96 μm can reach maximum power of around 4.2 W. The threshold is around 500 mA, and slope efficiency is about 0.42 W/A. Apart from the excellent external quantum efficiency and thermal performance, devices also show reduced beam divergence which is about 30°. Accelerated life-time test has also been performed to determine the reliability performance. Thus far more than 9000 life-test-hour has been accumulated, and there is no detectable sign of the power degradation, indicating our devices are extremely reliable.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bocang Qiu, Bocang Qiu, Weimin Wang, Weimin Wang, Wenbin Liu, Wenbin Liu, Chuzhong Zhao, Chuzhong Zhao, Langxing Kuang, Langxing Kuang, Chunyu Miao, Chunyu Miao, James Ho, James Ho, H. Martin Hu, H. Martin Hu, } "4W high performance 1470 nm InGaAsAs lasers", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100171C (9 November 2016); doi: 10.1117/12.2247923; https://doi.org/10.1117/12.2247923
PROCEEDINGS
7 PAGES


SHARE
Back to Top