31 October 2016 The realization of optical switching generated from the combination of Ag/a-Si/p-Si memristor and silicon waveguide
Author Affiliations +
Abstract
Much attention has been attracted by applications of memristor in data storage, unconventional computing and logic circuit since 2008, but very few have been focused on applications in optical switches and optical modulators. Here, by combining a silicon waveguide with a memristor of Ag/a-Si/p-Si structure, a novel optical switch (OS) for use at 1.55μm has been set up. The device consists of a bottom p-Si waveguide, an upper a-Si layer and a top Ag electrode, i.e. a sandwich structure named as Ag/a-Si/p-Si. The light transmitting through the silicon waveguide can be modulated by changing optical parameters of a-Si dielectric layer in which the formation and annihilation of Ag filament can be adjusted by an alternately electrical field between Ag and p-Si electrodes. The distribution of optical power dependence on the thicknesses of a-Si layer and Ag layer as well as the geometric size of waveguide have been studied by numerical analysis. Finally, based on Ag/a-Si/p-Si sandwich structure and the simulated results, we have proposed a new and improved OS.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongyang Li, Anran Guo, Qinjian Song, Guohui Guo, Yadong Jiang, Wei Li, "The realization of optical switching generated from the combination of Ag/a-Si/p-Si memristor and silicon waveguide", Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 1001909 (31 October 2016); doi: 10.1117/12.2245695; https://doi.org/10.1117/12.2245695
PROCEEDINGS
7 PAGES


SHARE
Back to Top